complementary plastic power transistors npn/pnp silicon dpak for surface mount applications . . . designed for low voltage, lowpower, highgain audio amplifier applications. ? collectoremitter sustaining voltage e v ceo(sus) = 25 vdc (min) @ i c = 10 madc ? high dc current gain e h fe = 70 (min) @ i c = 500 madc = 45 (min) @ i c = 2 adc = 10 (min) @ i c = 5 adc ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (a1o suffix) ? lead formed version in 16 mm tape and reel (at4o suffix) ? low collectoremitter saturation voltage e v ce(sat) = 0.3 vdc (max) @ i c = 500 madc = 0.75 vdc (max) @ i c = 2.0 adc ? high currentgain e bandwidth product e f t = 65 mhz (min) @ i c = 100 madc ? annular construction for low leakage e i cbo = 100 nadc @ rated v cb ??????????????????????? ??????????????????????? maximum ratings ????????????? ????????????? rating ???? ???? symbol ?????? ?????? value ??? ??? unit ????????????? ????????????? collectorbase voltage ???? ???? v cb ?????? ?????? 40 ??? ??? vdc ????????????? ????????????? collectoremitter voltage ???? ???? v ceo ?????? ?????? 25 ??? ??? vdc ????????????? emitterbase voltage ???? v eb ?????? 8 ??? vdc ????????????? ? ??????????? ? ????????????? collector current e continuous peak ???? ? ?? ? ???? i c ?????? ? ???? ? ?????? 5 10 ??? ? ? ? ??? adc ????????????? ????????????? base current ???? ???? i b ?????? ?????? 1 ??? ??? adc ????????????? ? ??????????? ? ????????????? total device dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ?????? ? ???? ? ?????? 12.5 0.1 ??? ? ? ? ??? watts w/ c ????????????? ????????????? total device dissipation @ t a = 25 c* derate above 25 c ???? ???? p d ?????? ?????? 1.4 0.011 ??? ??? watts w/ c ????????????? ? ??????????? ? ????????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ?????? ? ???? ? ?????? 65 to +150 ??? ? ? ? ??? c on semiconductor ? semiconductor components industries, llc, 2001 november, 2001 rev. 4 1 publication order number: mjd200/d mjd200 mjd210 case 369a13 silicon power transistors 5 amperes 25 volts 12.5 watts case 36907 minimum pad sizes recommended for surface mounted applications npn pnp 0.243 6.172 0.063 1.6 0.118 3.0 0.100 2.54 0.165 4.191 0.190 4.826 inches mm
mjd200 mjd210 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? thermal characteristics ?????????????????? ?????????????????? characteristic ?????? ?????? symbol ???????? ???????? max ???? ???? unit ?????????????????? ? ???????????????? ? ?????????????????? thermal resistance, junction to case thermal resistance, junction to ambient* ?????? ? ???? ? ?????? r q jc r q ja ???????? ? ?????? ? ???????? 10 89.3 ???? ? ?? ? ???? c/w ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????? ?????????????????? characteristic ?????? ?????? symbol ????? ????? min ???? ???? max ???? ???? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????? ? ???????????????? ? ?????????????????? collectoremitter sustaining voltage (1) (i c = 10 madc, i b = 0) ?????? ? ???? ? ?????? v ceo(sus) ????? ? ??? ? ????? 25 ???? ? ?? ? ???? e ???? ? ?? ? ???? vdc ?????????????????? ? ???????????????? ? ?????????????????? collector cutoff current (v cb = 40 vdc, i e = 0) (v cb = 40 vdc, i e = 0, t j = 125 c) ?????? ? ???? ? ?????? i cbo ????? ? ??? ? ????? e e ???? ? ?? ? ???? 100 100 ???? ? ?? ? ???? nadc ?????????????????? ?????????????????? emitter cutoff current (v be = 8 vdc, i c = 0) ?????? ?????? i ebo ????? ????? e ???? ???? 100 ???? ???? nadc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (2) (i c = 500 madc, v ce = 1 vdc) (i c = 2 adc, v ce = 1 vdc) (i c = 5 adc, v ce = 2 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 70 45 10 ???? ? ?? ? ? ?? ? ???? e 180 e ??? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (2) (i c = 500 madc, i b = 50 madc) (i c = 2 adc, i b = 200 madc) (i c = 5 adc, i b = 1 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 0.3 0.75 1.8 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter saturation voltage (1) (i c = 5 adc, i b = 1 adc) ????? ????? v be(sat) ??? ??? e ???? ???? 2.5 ??? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (1) (i c = 2 adc, v ce = 1 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.6 ??? ? ? ? ??? vdc ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain e bandwidth product (3) (i c = 100 madc, v ce = 10 vdc, f test = 10 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 65 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance mjd200 (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mjd210 ????? ? ??? ? ????? c ob ??? ? ? ? ??? e e ???? ? ?? ? ???? 80 120 ??? ? ? ? ??? pf *when surface mounted on minimum pad sizes recommended. (continued) (1) pulse test: pulse width = 300 m s, duty cycle 2%. (2) pulse test: pulse width = 300 m s, duty cycle 2%. (3) f t = ? h fe ?? f test .
mjd200 mjd210 http://onsemi.com 3 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 15 10 t c 5 20 p d , power dissipation (watts) figure 2. switching time test circuit 10k i c , collector current (amps) 10 5k 3k 2k 1k 500 300 200 100 50 1k i c , collector current (amps) v cc = 30 v i c /i b = 10 t j = 25 c t, time (ns) 500 300 200 100 50 t d 30 20 10 5 2.5 0 1.5 1 t a 0.5 2 1 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 figure 3. turnon time figure 4. turnoff time +11 v 25 m s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1% 51 d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma t c t a (surface mount) r b and r c varied to obtain desired current levels for pnp test circuit, reverse all polarities t, time (ns) 3 2 5 2 13 t r mjd200 mjd210 30 20 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 13 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f mjd200 mjd210
mjd200 mjd210 http://onsemi.com 4 i c , collector current (amp) i c , collector current (amp) i c , collector current (amp) h fe , dc current gain figure 5. dc current gain figure 6. aono voltage i c , collector current (amp) 200 400 0.07 0.1 0.3 5 0.05 100 80 60 40 0.2 i c , collector current (amp) figure 7. temperature coefficients 20 0.7 1 3 2 0.5 25 c t j = 150 c -55 c 2 0.05 i c , collector current (amp) 5 1.6 1.2 0.8 0.4 0 3 2 0.07 0.2 0.1 0.5 0.3 1 0.7 t j = 25 c v, voltage (volts) npn mjd200 pnp mjd210 v ce = 1 v v ce = 2 v 5 0.05 3 200 400 100 80 60 40 20 h fe , dc current gain 25 c t j = 150 c -55 c v ce = 1 v v ce = 2 v v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1 v q vc for v ce(sat) q vb for v be 2 0.05 1.6 1.2 0.8 0.4 0 3 2 0.07 0.2 0.1 0.5 0.3 1 0.7 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1 v v , temperature coefficients (mv/ c) q +2.5 +2 +1.5 +1 0 -0.5 -1 -1.5 -2 +0.5 -2.5 0.07 0.1 0.3 5 0.05 0.2 0.7 1 3 2 0.5 *applies for i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v , temperature coefficients (mv/ c) q +2.5 +2 +1.5 +1 0 -0.5 -1 -1.5 -2 +0.5 -2.5 0.07 0.1 0.3 5 0.05 0.2 0.7 1 3 2 0.5 5 0.07 0.1 0.3 0.2 0.7 1 2 0.5 *applies for i c /i b h fe/3 * q vc for v ce(sat) q vb for v be 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c
mjd200 mjd210 http://onsemi.com 5 t, time (ms) 0.01 0.02 0.05 1 2 5 10 20 50 100 200 0.1 0.5 0.2 1 0.2 0.1 0.05 r(t), transient thermal r q jc (t) = r(t) q jc r q jc = 10 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 0 (single pulse) resistance (normalized) figure 8. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01 10 v ce , collector-emitter voltage (volts) 0.01 30 2 5 0.1 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo figure 9. active region safe operating area 500 m s dc 1 3 1ms 20 10 7 5 3 2 1 0.3 100 m s t j = 150 c i c , collector current (amp) 5ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 9 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 8. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. case 369 may be ordered by adding a a1o suffix to the device title (i.e. mjd2001) 200 v r , reverse voltage (volts) 20 40 70 100 30 figure 10. capacitance 50 20 10 6 4 2 1 0.4 c, capacitance (pf) 0.6 t j = 25 c mjd200 (npn) mjd210 (pnp) c ob c ib
mjd200 mjd210 http://onsemi.com 6 package dimensions case 369a13 issue aa dpak d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4
mjd200 mjd210 http://onsemi.com 7 package dimensions case 36907 issue m dpak notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27
mjd200 mjd210 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjd200/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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